invisible laser radiation avoid beam exposure class 3b laser product notice : stresses greater than those listed under ?absolute maximum ratings may cause permanent damage to the device . these are stress ratings only and functional operation of the device at these or any other condition beyond those ind icated for extended periods of time may effect device reliabilit y. www.ulm-photonics.de attention: electrostatic sensitive devices observe precautions for handling 10 gbps vcsel 850 nm 1x1, 1x4/12 chip absolute maximum ratings vertical cavity surface-emitting laser high speed up to 10 gbps unsealed 85% r.h./85c certified 1x1, 1x4, 1x12 chips preliminary electro-optical characteristics (chip) parameter symbol units min typ max test conditions emission wavelength r nm 840 850 860 i op =6ma; t=0..70c threshold current i th ma 1.0 t=0..70c threshold voltage u th v 1.5 1.8 t=0..70c slope efficiency s w/a 0.3 0.4 0.5 t=20c variation of s over temp. s (t) w/a 0.12 t=0..70c optical output power p opt mw 1.0 2.5 i op =6ma; t=0..70c variation of p opt over temp. p opt (t) mw 0.8 i op =6ma; t=0..70c laser voltage u op v 2.0 i op =6ma; t=20c differential series resistance r s 50 70 90 i op =6ma; t=20c 3db modulation bandwidth 3db ghz 8 i op =6ma; t=20c rise and fall time t r /t f 20/80 ps 30/45 55 i op =6ma; er=8db; t=20c relative intensity noise rin db/hz -130 -120 i op =6ma; 0.1..10ghz; t=20c wavelength tuning over current nm/ma 0.3 wavelength tuning over temp. nm/k 0.07 thermal resistance r thermal k/mw 1.8 2.5 t=20c beam divergence 20 30 i op =6ma; full-width 1/e^2; t=20c spectral bandwidth nm 0.45 i op =6ma; rms; t=20c storage temperature - 40 .. 125c operating temperature -20 .. 85c electrical power dissipation 20 mw continous forward current 8 ma reverse voltage 8v soldering temperature 330c v17 www.datasheet.in
u-l-m photonics gmbh / d +49(0)731 550194-011 (-026) sales@ulm-photonics.de sesna-corp. / japan +81(0)3 5976 13-71 (-74) kumazawa@sesna.net contact fon (fax) email www.ulm-photonics.de hikari-inc. / japan +81(0)3 38331-17 (-18) ohta@hikari-trading.com lamtron co., ltd. / korea +82 31 719 4337 (4338) william66@ hanafos.com output power over temp. 10 gbps eye diagram ulm850-10-tt-n0101u (10 gbps, anode and cathode bond pad, single channel ) size 250x250x150 ulm850-10-tt-n0104u (10 gbps, anode and cathode bond pad, 1x4 array) size 1000x250x150 ulm850-10-tt-n0112u (10 gbps, anode and cathode bond pad, 1x12 array) siz e 3000x250x150 isolated cell available v17 ulm850-10-tn-n0101u (10 gbps, backside cathode contact, single channel) si ze 250x250x150 ULM850-10-TN-N0104U (10 gbps, backside cathode contact, 1x4 array) size 1000x250x150 ulm850-10-tn-n0112u (10 gbps, backside cathode contact, 1x12 array) size 3000x250x150 livt_00000_145e_192_136_1_1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 current (ma) output power (mw) 125c 70c 25c 0c driver signal: 10.3125 ghz prbs31 ioff/ ion = 2/ 10 ma iavg = 6 ma umod (50 ohm) = 0.7 v optical signal: e.r. = 8 db poff/ pon = 0.6/ 3.8 mw pavg = 2.2 mw rise/ fall time 20/80 = 30/45 ps 10/90 = 40/60 ps www.datasheet.in
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